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| NTE5511 thru NTE5513 Silicon Controlled Rectifier (SCR) 5 Amp Description: The NTE5511 thru NTE5513 all-diffused, three junction, silicon controlled rectifiers (SCR's) are intended for use in power-control and power-switching applications. These devices are available in a TO66 type package and have a blocking voltage capability of up to 600V and a forward current rating of 5A (rms value) at a case temperature of +75C. Features: D Designed Especially for High-Volume Systems D Readily Adaptable for PC Boards and Metal Heat Sinks D Low Switching Losses D High di/dt and dv/dt Capabilities D Shorted Emitter Gate-Cathode Construction D Forward and Reverse Gate Dissipation Ratings D All-Diffused Construction Assures Exceptional Uniformity and Stability of Characteristics D Direct-Soldered Internal Construction Assures Exceptional Resistance to Fatigue D Symmetrical Gate-Cathode Construction Provides Uniform Current Density, Rapid Electrical Conduction, and Efficient Heat Dissipation D All-Welded Construction and Hermetic Sealing D Low Leakage Currents, Forward and Reverse D Low Forward Voltage Drop at High Current Levels D Low Thermal Resistance Absolute Maximum Ratings: (For Operation with Sinusoidal AC Supply Voltage at a Frequency between 50Hz and 400Hz, and with Resistive or Inductive Load) Transient Peak Reverse Voltage (Non-Repetitive), VRM (non-rep) NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330V NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 660V NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Peak Reverse Voltage (Repetitive), VRM (rep) NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Peak Forward Blocking Voltage (Repetitive), VFBOM (rep) NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Average DC Forward Current, IF(av) (TC = +75C mounted on heat sink, conduction angle or 180) . . . . . . . . . . . . . . . . . . . . 3.2A RMS Forward Current (TC = +75C mounted on heat sink), IFRMS . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak Surge Current (For one cycle of applied voltage), iFM(surge) . . . . . . . . . . . . . . . . . . . . . . . . . 60A Sub-Cycle Surge (Non-Repetitive, for a period of 1ms to 8.3ms), I2t . . . . . . . . . . . . . . . . . . 15A2sec Rate of Change of Forward Current (Note 1), di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A/s Gate Power (Peak, Forward, or Reverse, for 10s duration, Note 2), PGM . . . . . . . . . . . . . . . . 13W Average Gate Power (Note 2), PGAV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Case Temperature Range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +100C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +125C Note 1. VFB = vBOO(min value), IGT = 200mA, 0.5s rise time Note 2. Any values of peak gate current or peak gate voltage to give the maximum gate power is permissible. Electrical Characteristics: (At Maximum Ratings, TC = +25C unless otherwise specified) Parameter Forward Breakover Voltage NTE5511 NTE5512 NTE5513 Peak Blocking Forward Current NTE5511 NTE5512 NTE5513 Peak Blocking Reverse Current NTE5511 NTE5512 NTE5513 Forward Voltage Drop DC Gate-Trigger Current DC Gate-Trigger Voltage Holding Current Critical Rate of Applied Forward Voltage Turn-On Time (Delay Time + Rise Time) Turn-Off Time (Reverse Recovery Time + Gate Recovery Time) Thermal Resistance, Junction-to-Case vF IGT VGT IHold dv/dt ton toff VFB = vBOO (min), exponential rise, TC = +100C VFB = vBOO (min), iF = 4.5A, IGT = 200mA, 0.1s rise time iF = 2A, 50s pulse width, dvFB/dt = 20V/s, dir/dt = 30A/s, IGT = 200mA, TC = +75C IRBOM IFBOM VFBO = 200V VFBO = 400V VFBO = 600V VRBO = 200V VRBO = 400V VRBO = 600V IF = 30A TC = +100C TC = +100C Symbol vBOO Test Conditions TC = +100C 200 400 600 - - - - - - - - - - 10 0.75 - - - - 0.10 0.20 0.40 0.05 0.10 0.20 2.15 8 1.2 10 200 1.5 15 - - - 1.5 3.0 4.0 0.75 1.5 2.0 2.80 15 2.0 20 - - 50 V V V mA mA mA mA mA mA V mA V mA V/s s s Min Typ Max Unit RJC - - 4 C/W .485 (12.3) Dia .062 (1.57) .295 (7.5) .031 (0.78) Dia .960 (24.3) .580 (14.7) .360 (9.14) Min Gate .147 (3.75) Dia (2 Places) .145 (3.7) R Max .200 (5.08) Anode/Case Cathode |
Price & Availability of NTE5513
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